Colour sensitive devices based on double p-i-n-i-p stacked photodiodes

Abstract

In this work, we report on an amorphous silicon based image sensor with a bias voltage controllable spectral response characteristics. This multilayered device is composed by two stacked p-i-n-i-p structures produced by plasma enhanced chemical vapour deposition on a glass substrate and sandwiched between two transparent conductive oxide electrodes with a patterned molybdenum layer between the sensing and switching structures. Optical readout technique is used for image readout. Device performances have been evaluated from the current–voltage characteristics and spectral response measurements performed for the p-i-n-i-p test structures and stacked device. It is demonstrated that the device is sensitive to blue–green or red light depending on polarity of the bias voltage enabling the detection of colour images. Device design is discussed and supported by a numerical simulation