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A small-area self-biased wideband CMOS balun LNA with noise cancelling and gain enhancement

Custodio, J. R. and Oliveira, L. and Goes, J. and Oliveira, J.P. and Bruun, Erik and Andreani, Pietro (2010) A small-area self-biased wideband CMOS balun LNA with noise cancelling and gain enhancement. [Paper]. In: NORCHIP 2010, 15-16 Nov. 2010, Tampere. URL: http://dx.doi.org/10.1109/NORCHIP.2010.5669429.

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Official URL: http://dx.doi.org/10.1109/NORCHIP.2010.5669429

Abstract

In this paper we present a low-power and small-area balun LNA. The proposed inverter-based topology uses self-biasing and noise cancelling, yielding a very robust LNA with a low NF. Comparing this circuit with a conventional inverter-based circuit, we obtain a ~3 dB enhancement in voltage gain, with improved robustness against PVT variations. Simulations results in a 130 nm CMOS technology show a 17.7dB voltage gain, nearly flat over a wide bandwidth (200MHz-1GHz), and an NF of approximately 4dB. The total power consumption is below 7.5 mW, with a very small die area of 0.007 mm2. All data are extracted from post-layout simulations.

Item Type:Conference or Workshop Item (Paper)
Divisions:Centre of Technology and Systems 2007-2010 > CTS0710-A Microelectronics and Telecommunications > CTS0710-A1 Microelectronics Design
Departamento de Engenharia Electrotécnica 2010 > DEE2010-A Telecomunicações e Electrónica > DEE2010-A2 Electrónica
ID Code:4818
Deposited By:Elsa Abrantes
Deposited On:25 Jun 2011 18:05
Last Modified:25 Jun 2011 18:10

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