Dugaev, V. K. and Litvinov, V. I. and Barnás, J. and Vieira, M (2003) Exchange interaction and ferromagnetism in III-V semiconductors. Physical Review B, 67 (033201), pp. 1-4. ISSN 1098-0121. (ISI Web of Science, Citations: 11).
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Abstract
The mechanism of indirect exchange interaction leading to ferromagnetism in magnetically doped III-V semiconductors is considered theoretically. The mechanism is based on the interplay of two interactions: (i) hybridization of band states with shallow impurity ones, and (ii) direct exchange coupling between localized spins and the band states. The indirect exchange interaction between two Mn impurities occurs when the wave functions of shallow states associated with the Mn atoms overlap. The mechanism does not rely on degenerate carriers, and therefore can describe the ferromagnetic transition in both degenerate and nondegenerate semiconductors. Ferromagnetic critical temperature has been calculated within the percolation approach, and is in good agreement with available experimental data.
| Item Type: | Article |
|---|---|
| Divisions: | Centre of Technology and Systems 2003-2006 > CTS0306-A Microelectronics > CTS0306-A2 Microelectronics, Materials and Processes Departamento de Engenharia Electrotécnica > Electrónica |
| ID Code: | 609 |
| Deposited By: | Administrator |
| Deposited On: | 12 Feb 2007 11:22 |
| Last Modified: | 25 Mar 2011 13:54 |
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