Items where Author is "Slobodsky, A. H."

Article

Dugaev, V. K. and Litvinov, V. I. and Barnás, J. and Slobodsky, A. H. and Dobrowolski, W. and Vieira, Manuela (2003) Mechanism of ferromagnetism in diluted magnetic semiconductors at low carrier density. Journal of Superconductivity: Incorporating novel magnetism, 16 (1), pp. 67-70. ISSN 0896-1107. (ISI Web of Science, Citations: 4).

Slobodsky, A. H. and Dugaev, V. K. and Vieira, Manuela (2002) Ferromagnetic ordering in diluted magnetic semiconductors. Condensed Matter Physics, 5 (3), pp. 531-540.

Conference or Workshop Item

Dugaev, V. K. and Litvinov, V. I. and Barnás, J. and Slobodsky, A. H. and Dobrowolski, W. and Vieira, Manuela (2002) Ferromagnetic phase transition in diluted magnetic semiconductors: Role of disorder and magnetic semiconductors at low carrier density. [Other]. In: XXXI International Conference on the Physics of Semiconducting Coumponds, June 7-14, Jaszowiec, Poland.

Dugaev, V. K. and Litvinov, V. I. and Barnás, J. and Slobodsky, A. H. and Dobrowolski, W. and Vieira, Manuela (2002) Ferromagnetism in diluted magnetic semiconductor. [Paper]. In: 26th International Conference on Physics of Semiconductors, July 26 to August 2, Edimburg, UK.

Dugaev, V. K. and Litvinov, V. I. and Barnás, J. and Slobodsky, A. H. and Dobrowolski, W. and Vieira, Manuela (2002) Ferromagnetism in diluted magnetic semiconductors at low carrier density. [Paper]. In: European Conference Physics of Magnetism 2002, July 1-5, Poznan, Poland.

Dugaev, V. K. and Slobodsky, A. H. and Barnás, J. and Litvinov, V. I. and Dobrowolski, W. and Vieira, Manuela (2002) Ferromagnetism in diluted magnetic semiconductors: effect of disorder. [Paper]. In: 19th CMD/EPS- CMMP02, April 7-11, Briton, UK.

Dugaev, V. K. and Litvinov, V. I. and Barnás, J. and Slobodsky, A. H. and Dobrowolski, W. and Vieira, Manuela (2002) New mechanism of magnetic interaction and ferromagnetism of diluted magnetic semiconductor. [Other]. In: 2nd International Conference on Physics and Applications of Spin Related Phenomena in Semiconductors, July 23-26, Wurzburg, Germany.